D10 Datasheet, PDF (3/13 Pages) STMicroelectronics – Memory Micromodules General Information for D1, D2 and C Packaging

MICROMODULES
Table 3. Manufacturing Flow and Manufacturing Facility Locations
Operation
Location and Facility
Wafer Diffusion
Rousset, France. 6” wafer fab.
Agrate, Italy. 6” wafer fab.: standard EEPROM only
Electrical Wafer Test
Rousset, France.
Agrate, Italy: standard EEPROM only
Assembly
Casablanca, Morocco.
Final Test
Rousset, France.
Casablanca, Morocco.
Table 4. Material Specification
Material
Description
Tape
Basic material
MCTS T2 or IBIDEN rough, typical thickness 120 µm
Adhesive
Modified epoxy, typical thickness 18 µm
Laminated copper foil
Typical thickness 35 µm
Adhesive strength
> 0.8 N/mm at room temperature. Monitored by the tape manufacturer using
appropriate test methods
Tape Surface
The whole epoxy adhesive surface is controlled to be free of dirt, grease, cleaning
compounds and parting compounds
Surface roughness
Typically Rz: 3-12 µm at first accepted delivery
Contact surface
Nickel-gold, galvanised treatment
Nickel thickness
2 µm (min.)
Gold thickness
contact side, 0.1 µm (min.)
Total tape thickness
160 ± 30 µm
Control, Palmer
“Special flat” diameter 3 mm, F = 1.5 N
Chip Interconnect
Dice bonding
Silver epoxy
Bonding wire
Gold 25 µm
Ring (D22 only)
Bronze
Protective coating
Material
UV epoxy, Black epoxy
Assembly
Casablanca, Morocco.
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