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| BU505_05 Datasheet, PDF (3/10 Pages) STMicroelectronics – High Voltage NPN Multiepitaxial Fast-Switching Transistor | |||
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BU505
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ICES Collector Cut-off Current
(VBE = 0)
VCE = 1500V
VCE = 1500V____TC = 125°C
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
VCEO(SUS) Collector-Emitter
Note: 1 Sustaining Voltage (IB = 0)
IC = 10mA
L = 25mH
VCE(sat) Collector-Emitter Saturation
Note: 1 Voltage
IC = 2A _____ IB = 0.9A
VBE(sat) Base-Emitter Saturation Voltage IC = 2A _____ IB = 0.9A
Note: 1
Is/b Second Breakdown Current
VCE = 120V t = 220μs
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 2A ____ _ Vclamp = 250V
IB1 = 0.7A ___ Vbe(off) = -5A
Rbb = 0
L = 200 μH
0.15
1
1
700
1
1.3
2
2
350
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
Unit
mA
mA
mA
V
V
V
A
μs
ns
3/10
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