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BU505_05 Datasheet, PDF (2/10 Pages) STMicroelectronics – High Voltage NPN Multiepitaxial Fast-Switching Transistor
1 Absolute Maximum Ratings
1 Absolute Maximum Ratings
Table 1. Absolute Maximum Rating
Symbol
Parameter
VCES
VCEO
IC
ICM
IB
IBM
PTOT
TSTG
TJ
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Collector Current
Collector Peak Current (tP < 5ms)
Base Current
Base Peak Current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage Temperature
Max. Operating Junction Temperature
Table 2. Thermal Data
Symbol
Parameter
RthJ-case Thermal Resistance Junction-Case____________________Max
BU505
Value
Unit
1500
V
700
V
2.5
A
4
A
1
A
2
A
75
W
-65 to 150
°C
150
°C
Value
1.67
Unit
°C/W
2/10