BTA10GP Datasheet, PDF (3/4 Pages) STMicroelectronics – TRIACS

Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
P(W)
14
12
10
8
6
180 ^O
= 180^o
= 120^o
= 90^o
= 60^o
4 _{= 30} ^o
2
I _T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
BTA10 GP
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
P (W)
14
12
10
Tcase (^oC)
-85
Rth = 0 ^o C/W
2.5^o C/W
5^o C/W
10^o C/W _-95
8
-105
6
4
-115
2
Tamb (^oC)
0
-125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
I _T(RMS)(A)
12
10
8
6
= 180^o
4
2
Tcas e(^oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
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