BTA10GP Datasheet, PDF (2/4 Pages) STMicroelectronics – TRIACS

BTA10 GP
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Parameter
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
Value
60
4
3
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG _(AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VD=12V (DC) RL=33Ω
Tj=25°C
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
Tj=25°C
Tj=110°C
Tj=25°C
Tj=25°C
IH *
VTM *
IDRM
IRRM
IT= 100mA gate open
ITM= 14A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
(dV/dt)c * (dI/dt)c= 2.2A/ms
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
Tj=110°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III- IV
II
MAX
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
MAX
MIN
TYP
MIN
TYP
Suffix
GP
50
75
1.5
0.2
2
20
40
13
1.5
0.01
0.5
30
100
1
10
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
V/µs
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