BC107 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN general purpose transistors

BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
P a ram et er
Test Conditions
CCBO
Collector Base
Capacitance
IE = 0 VCB = 10 V
f = 1MHz
C_EBO
Emitter Base
Capacitance
I_C = 0 V_EB = 0.5 V f = 1MHz
NF Noise Figure
h_ie
Input Impedance
I_C = 0.2 mA V_CE = 5 V
f = 1KHz Rg = 2KΩ B = 200Hz
I_C = 2 mA V_CE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
f = 1KHz
hre
Reverse Voltage Ratio IC = 2 mA VCE = 5 V f = 1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
h_oe Output Admittance
I_C = 2 mA V_CE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
f = 1KHz
Min.
Typ .
4
M a x.
6
Unit
pF
12
pF
2
10
dB
4
KΩ
3
KΩ
4.8
KΩ
5.5
KΩ
3
KΩ
4.8
KΩ
7
KΩ
2.2
10^-4
1.7
10^-4
2.7
10^-4
3.1
10^-4
1.7
10^-4
2.7
10^-4
3.8
10^-4
30
µS
13
µS
26
µS
30
µS
13
µS
26
µS
34
µS
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
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