BC107 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN general purpose transistors

BC107/BC108
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-Case
R_{thj- amb} Thermal Resistance Junction-Ambient
Max
200
Max
500
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (I_E = 0)
V_(BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
for BC107
V_CB = 40 V
VCB = 40 V
for BC108
VCB = 20 V
VCB = 20 V
I_C = 10 µA
for BC107
for BC108
Tcas e = 150 ^oC
Tcas e = 150 ^oC
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for BC107
for BC108
V(BR)EBO
V_{CE(sat )}∗
Em it t er -Base
Breakdown Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
IE = 10 µA
for BC107
for BC108
I_C = 10 mA
IC = 100 mA
I_B = 0.5 mA
IB = 5 mA
VBE(s at)∗
V BE(o n )∗
hFE∗
Ba se-Em it t er
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
IC = 10 mA IB = 0.5 mA
I_C = 100 mA I_B = 5 mA
IC = 2 mA
I_C = 10 mA
VCE = 5 V
V_CE = 5 V
IC = 2 mA
VCE = 5 V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
I_C = 10 µA
for BC107
V_CE = 5 V
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
hfe∗ Small Signal Current IC = 2 mA VCE = 5 V f = 1KHz
Gain
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
I_C = 10 mA V_CE = 10 V f = 100 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
Min.
50
30
45
20
6
5
550
110
110
200
110
110
200
420
40
40
100
Typ .
70
200
750
950
650
700
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
M a x.
15
15
15
15
250
600
700
770
450
220
450
800
220
450
800
Unit
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
2/6