BAT30F4 Datasheet, PDF (3/10 Pages) STMicroelectronics – Negligible switching losses

BAT30F4
Characteristics
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C
Diode capacitance V_R = 1 V, F = 1 MHz
-
10
14
pF
Figure 3. Reverse leakage current versus
reverse applied voltage (typical values)
1.E+03 ^IR(µA)
1.E+02
Tj = 85°C
Figure 4. Forward voltage drop versus forward
current (typical values)
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1.E+01
Tj = 25°C
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1.E+00
1.E-01
0
(
VR(V)
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5
10
15
20
25
30
           
Figure 5. Relative variation of reverse leakage
current versus junction temperature
IR[Tj] / IR[Tj = 25 °C]
1.E+02
1.E+01
Figure 6. Junction capacitance versus reverse
applied voltage (typical values)
C(pF)
10
F = 1 MHz
V _OSC = 30 mV _RMS
Tj = 25°C
1.E+00
1.E-01
Tj(°C)
1.E-02
1
-30 -20 -10 0 10 20 30 40 50 60 70 80 90
1
VR(V)
10
100
Figure 7. Continuous forward current versus ambient temperature
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