BAS70 Datasheet, PDF (3/14 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 1)
P(W)
0.14
d=0.05 d=0.1
d=0.2
d=0.5
d=1
0.12
0.10
0.08
0.06
0.04
T
0.02
0.00
IF(AV)(A)
d=tp/T
tp
0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
I_F(AV)(A)
0.08
0.07
0.06
0.05
0.04
0.03
T
0.02
0.01
d=tp/T
tp
0.00
Tamb(°C)
0
25
50
75
100
125
150
Figure 3.
Reverse leakage current versus
reverse applied voltage
(typical values)
I_R(µA)
1.E+02
1.E+01
Tj=150 °C
1.E+00
1.E-01
Tj=85 °C
1.E-02
1.E-03
0
Tj=25 °C
VR(V)
10
20
30
40
50
60
70
Figure 4.
Reverse leakage current versus
junction temperature
(typical values)
I_R(µA)
1.E+02
V_R=50 V
1.E+01
1.E+00
1.E-01
1.E-02
0
Tj(°C)
25
50
75
100
125
150
Figure 5.
C(pF)
10.0
Junction capacitance versus
reverse applied voltage
(typical values)
F=1 MHz
V_OSC=30 mV_RMS
Tj=25 °C
1.0
0.1
0.1
VR(V)
1.0
10.0
100.0
Figure 6. Forward voltage drop versus
forward current (typical values)
I_FM(mA)
1.E+02
Tj=150 °C
1.E+01
Tj=-40 °C
1.E+00
Tj=85°C
1.E-01
VFM(V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Doc ID 12563 Rev 2
3/14