BAS70 Datasheet, PDF (2/14 Pages) NXP Semiconductors – Schottky barrier double diodes

Characteristics
1
Characteristics
BAS70
Table 2.
Symbol
Absolute ratings (limiting values at T_j = 25 °C, unless otherwise specified)
Parameter
Value
Unit
V_RRM
I_F
I_FSM
T_stg
T_j
T_L
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current t_p = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
70
V
70
mA
1
A
- 65 to +150 °C
150
°C
260
°C
Table 3.
Symbol
Thermal parameters
Parameter
Value
Unit
R_th(j-a) Junction to ambient⁽¹⁾
SOD-123, SOT-23
500
SOT-323, SOD-323
550
SOD-523, SOT-666
600
1. Epoxy printed circuit board with recommended pad layout
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
I_R(1)
V_F(2)
Reverse leakage current
Forward voltage drop
T_j = 25 °C
T_j = 25 °C
V_R = 50 V
V_R = 70 V
I_F = 1 mA
I_F = 10 mA
I_F = 15 mA
1. Pulse test: t_p = 5 ms, δ < 2 %
2. Pulse test: t_p = 380 µs, δ < 2 %
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
100
10
410
750
1000
Max.
nA
µA
mV
Unit
C Diode capacitance
R_F
Differential forward
resistance
L_S Series inductance
V_R = 0 V, F = 1 MHz
I_F = 10 mA, F = 100 MHz
2
pF
30
Ω
1.5
nH
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Doc ID 12563 Rev 2