BAS70-07S Datasheet, PDF (3/4 Pages) NXP Semiconductors – Schottky barrier double diode

Fig. 1: Forward voltage drop versus forward
current (typical values).
IFM(mA)
1.E+02
1.E+01
1.E+00
Tj=150°C
Tj=125°C
Tj=85°C
Tj=25°C
Tj=-40°C
VFM(V)
1.E-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
BAS70-07S / BAS70-08S
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1.E+02
Tj = 150°C
1.E+01
1.E+00
Tj = 85°C
1.E-01
1.E-02
Tj = 25°C
1.E-03
0
VR(V)
10
20
30
40
50
60
70
Fig. 3: Differential forward resistance versus
forward current (typical values).
Rf(Ω)
1000
F = 10kHz
Tj = 25°C
100
10
0.1
IF(mA)
1.0
10.0
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
1.5
1.4
F = 1MHz
Vosc = 30mVRMS
1.3
Tj = 25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VR(V)
0.0
0
10
20
30
40
50
60
70
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board, epoxy FR4).
Zth(j-a)(°C/W)
1000.0
100.0
10.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4).
Rth(j-a)
600
550
500
450
400
350
300
0
S(mm²)
5
10 15 20 25 30 35 40 45 50
3/4