BAS70-07S Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diode

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BAS70-07S / BAS70-08S
RF DETECTION DIODE
FEATURES AND BENEFITS
s LOW DIODE CAPACITANCE
s LOW SERIES INDUCTANCE AND RESISTANCE
s SURFACE MOUNT PACKAGE
DESCRIPTION
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
SOT323-6L
BAS70-07S SCHEMATIC DIAGRAM
BAS70-08S SCHEMATIC DIAGRAM
1
6
1
6
2
5
2
5
3
4
3
4
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V_R Continuous reverse voltage
I_F Continuous forward current
I_FRM Repetitive peak forward current
I_FSM Surge non repetitive forward current
P
Power Dissipation
T_stg Storage temperature range
Tj Maximum junction temperature
TL Maximum temperature for soldering
t_p = 10 ms sinusoidal
Ta = 55°C
Value
Unit
70
V
70
mA
70
mA
1
A
250
mW
- 65 to +150 °C
150
°C
260
°C
December 2001 - Ed: 2A
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