BAS69 Datasheet, PDF (3/9 Pages) STMicroelectronics – Low capacitance small signal Schottky diodes

BAS69 Series
Characteristics
Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(mA)
1.E+02
1.E+01
Tj=125°C
1.E+00
Tj=85°C
Tj=25°C
Tj=-40°C _VFM(V)
1.E-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Figure 2.
Reverse leakage current versus
reverse voltage applied (typical
values)
IR(µA)
1.E+02
1.E+01
Tj=125°C
1.E+00
Tj=85°C
1.E-01
1.E-02
Tj=25°C
1.E-03
V_R(V)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
Figure 3.
RF(Ω)
100
10
1
1.0
Differential forward resistance
versus forward current (typical
values)
F=10kHz
Tj=25°C
IF(mA)
10.0
100.0
Figure 4.
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
2.5
F=1MHz
Vosc =30mVRMS
Tj=25°C
VR(V)
5.0
7.5
10.0
12.5
15.0
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-323)
1.E+00
Z_th(j-a)/R_th(j-a)
Single pulse
SOT-323
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-666)
Z_th(j-a)/R_th(j-a)
1.E+00
Single pulse
SOT-666
1.E-01
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
Epoxy FR4
S_CU=2.25 mm²
e_CU=35 µm
1.E+00 1.E+01 1.E+02 1.E+03
1.E-01
1.E-02
1.E-03
1.E-02
tP(s)
1.E-01
Epoxy FR4
e_CU=35 µm
1.E+00
1.E+01
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