BAS69 Datasheet, PDF (2/9 Pages) STMicroelectronics – Low capacitance small signal Schottky diodes

Characteristics
1
Characteristics
BAS69 Series
Table 1. Absolute ratings (limiting values at T_j = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V_RRM Repetitive peak reverse voltage
I_F
Continuous forward current
I_FSM Surge non repetitive forward current
T_stg Storage temperature range
T_j
Maximum operating junction temperature ⁽¹⁾
T_L
Maximum soldering temperature⁽¹⁾
1. Pulse test: t_p = 380 µs, δ < 2 %
Half wave, single phase 60 Hz
Table 2. Thermal parameters
Symbol
Parameter
15
V
10
mA
2
A
-65 to +150
150
°C
260
Value
Unit
R_th(j-a) Junction to ambient⁽¹⁾
1. Epoxy printed circuit board with recommended pad layout
SOT-323
550
° C/W
SOD-523, SOT-666
600
Table 3.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ Max. Unit
I_R(1) Reverse leakage current
V_F(1) Forward voltage drop
1. Pulse test: t_p ≤ 250 ms, δ ≤ 2 %
Table 4. Dynamic characteristics
Symbol
Parameter
T_j = 25° C
T_j = 125° C
T_j = 25° C
T_j = 125° C
T_j = 25° C
T_j = 125° C
T_j = 25° C
T_j = 125° C
V_R = 1 V
V_R = 15 V
I_F = 1 mA
I_F = 10 mA
Test conditions
0.035
6
30
µA
0.23
10 100
350 380
230 260
mV
500 570
460 510
Min. Typ Max. Unit
C Diode capacitance
R_F Forward resistance
L_S Series inductance
V_R = 0 V, F = 1 MHz
I_F = 5 mA, F = 100 MHz
1.0 pF
15
Ω
1.5
nH
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