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| 3STR1630 Datasheet, PDF (3/10 Pages) STMicroelectronics – Low voltage high performance NPN power transistor | |||
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3STR1630
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 30 V
0.1 µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
0.1 µA
Collector-base
V(BR)CBO breakdown voltage
IC = 100 µA
30
V
(IE = 0)
Collector-emitter
V(BR)CEO (1) breakdown voltage
IC = 10 mA
30
V
(IB = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100 µA
5
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 1 A
IC = 2 A
IC = 5 A
IB = 100 mA
IB = 40 mA
IB = 500 mA
60 90 mV
140 190 mV
240 300 mV
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 2 A
IC = 5 A
IB = 40 mA
IB = 500 mA
830 1100 mV
1000
mV
hFE (1) DC current gain
IC = 50 mA
IC = 0.5 A
IC = 2 A
IC = 5 A
VCE = 2 V
VCE = 2 V
VCE = 2 V
VCE = 2 V
210
180
560
170 260
90
ft
Transition frequency
IC = 0.1 A VCE = 10 V
100
MHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = 40 V, f = 1 MHz
15
pF
Resistive load
ton
Turn-on time
toff
Turn-off time
IC = 2.5 A
VCC = 12 V
IB1 = - IB2 = 125 mA
90
ns
VBE(off) = - 5 V
450
ns
1. Pulse test: pulse duration â¤300 µs, duty cycle â¤2%
Doc ID 16600 Rev 3
3/10
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