3STR1630 Datasheet, PDF (2/10 Pages) STMicroelectronics – Low voltage high performance NPN power transistor

Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_CES
V_CEO
V_EBO
I_C
I_CM
P_TOT
T_STG
T_J
Collector-emitter voltage (V_BE = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage (I_C = 0)
Collector current
Collector peak current (t_P < 5 ms)
Total dissipation at T_amb = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
R_thJA(1) Thermal resistance junction-ambient max
1. Device mounted on PCB area of 1 cm².
3STR1630
Value
Unit
30
V
30
V
5
V
6
A
12
A
0.5
W
-65 to 150
°C
150
°C
Value
250
Unit
°C/W
2/10
Doc ID 16600 Rev 3