2N2222AHR Datasheet, PDF (3/18 Pages) STMicroelectronics – Hi-Rel 40 V - 0.8 A NPN transistor

2N2222AHR
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_TOT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0) for JANS devices
Collector-emitter voltage (I_B = 0) for ESCC devices
Emitter-base voltage (I_C = 0)
Collector current
Total dissipation at T_amb ≤25 °C
ESCC: TO-18
LCC-3 and LCC-3UB
LCC-3 and LCC-3UB ⁽¹⁾
JANS: LCC-3UB
Total dissipation at T_case ≤25 °C
ESCC: TO-18
Total dissipation at T_sp(IS) = 25 °C
JANS: LCC-3UB
T_STG Storage temperature
T_J Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Value
Unit
75
V
50
V
40
V
6
V
0.8
A
0.5
0.5
0.73
W
0.5
1.8
1
W
-65 to 200
°C
200
°C
Table 3. Thermal data
Symbol
Parameter
LCC-3
LCC-3UB
R_thJC
Rt_hJSP(IS)
R_thJA
Thermal resistance junction-case (max) for JANS
Thermal resistance junction-case (max) for
ESCC
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC
Thermal resistance junction-ambient (max) for
JANS
Thermal resistance junction-ambient (max) for
ESCC
-
-
90
-
325
350
240⁽¹⁾
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
TO-18
-
97
-
-
-
350
Unit
°C/W
Doc ID 16558 Rev 9
3/18