2N2222AHR Datasheet, PDF (1/18 Pages) STMicroelectronics – Hi-Rel 40 V - 0.8 A NPN transistor

2N2222AHR
Hi-Rel 40 V - 0.8 A NPN transistor
Features
Datasheet — production data
Parameter
BV_{CEO min}
I_C (max)
h_FE at 10 V - 150 mA
ESCC
JANS
40 V
50 V
0.8 A
100
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
■ Up to 100 krad(Si) low dose rate
3
1
2
LCC-3
1
2
3
TO-18
3
4
1
2
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Figure 1. Internal schematic diagramI
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Table 1. Devices summary⁽¹⁾
Device
Qualification
Agency spec.
Package Radiation level EPPL
JANS2N2222A
-
-
JANS
MIL-PRF-19500/255 LCC-3UB
JANSR2N2222A
100 krad
-
SOC2222AUB
SOC2222AUBxxSW
-
Yes
LCC-3UB
100 krad
Yes
SOC2222A
SOC2222AxxSW
ESCC
5201/002
-
Yes
LCC-3
100 krad
Yes
2N2222AHR
2N2222ASW
-
-
TO-18
100 krad
-
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels
May 2012
This is information on a product in full production.
Doc ID 16558 Rev 9
1/18
www.st.com
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