M65KA512AB Datasheet, PDF (27/55 Pages) STMicroelectronics – 512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM

M65KA512AB
DC and ac parameters
Table 10. DC characteristics 2
Symbol
Parameter
Test condition⁽¹⁾
M65KA512AB
Unit
Max
I_DD1(2) Operating current
CAS Latency = 2 _{Burst length = 1, one bank active}
CAS Latency = 3 ^tRC ^{≥ t}RC^{(min), I}OL ^{= 0 mA}
70
mA
70
I_{DD2P Precharge Standby current in}
I_DD2PS ^{Power-Down Mode}
I_DD2N
Precharge Standby current in
Non Power-Down Mode
I_DD2NS
KE ≤ V_IL(max), t_K = t_K(min)
KE ≤ V_IL(max), t_K = ∞
KE ≥ V_IH (min), E ≥ V_IH (min), t_K =
t_K(min)
Input signals changed once in 30 ns
All other pins ≥ V_DD − 0.2 V or ≤ 0.2 V
KE ≥ V_IH (min), t_K = ∞
Input signals are stable
0.8
mA
0.6
4.0
mA
2.0
I_{DD3P Active Standby current in}
I_DD3PS ^{Power-Down Mode}
I_DD3N
Active Standby current in
Non Power-Down Mode
I_DD3NS
KE ≤ V_IL(max), t_K = t_K(min)
KE ≤ V_IL(max), t_K = ∞
3.0
mA
1.2
KE ≥ V_IH (min), E ≥ V_IH (min), t_K= t_K(min)
Input signals changed once in 30 ns
10
All other pins ≥ V_DD − 0.2 V or ≤ 0.2 V
mA
KE ≥ V_IH (min), t_K = ∞
7
Input signals are stable
I_DD4(2) Burst Mode current
CAS Latency = 2 _{tK ≥ tK (min), IOL = 0 mA}
CAS Latency = 3 ^{All banks active}
I_DD5 Auto-Refresh current
I_DD6 Self-Refresh current
I_DD7
Standby current in Deep
Power-Down Mode
t_RRC ≥ t_RRC (min), All banks active
KE ≤ 0.2 V
KE ≤ 0.2 V
50
mA
85
90
mA
See Table 11 µA
10
µA
1. T_J = –30 to 85 °C.
2. I_DD1 and I_DD4 depend on output loading and cycle rates. Specified values are measured with the output open.
Table 11. Self-Refresh current values in Normal Operating Mode
Memory array⁽¹⁾
Temperature in °C
4 Banks
2 Banks
1 Bank
Unit
Typ
Max
Typ
70 ≤ T_J ≤ 85
800
40 ≤ T_J ≤ 70
550
–30 ≤ T_J ≤ 40
300
1. V_DD = 1.8 ± 0.1 V, V_DDQ = 1.8 ± 0.1 V, V_SSQ = 0 V.
Max
650
380
240
Typ
Max
490
µA
290
µA
210
µA
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