M24C32-FDW6TP Datasheet, PDF (26/40 Pages) STMicroelectronics – 32-Kbit serial I²C bus EEPROM

DC and AC parameters
M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
Table 14. DC characteristics (M24C32-W, device grade 6)
Symbol
Parameter
Test conditions (see Table 6)
Min. Max. Unit
I_LI
Input leakage current
(SCL, SDA, E2, E1,
V_IN = V_SS or V_CC
E0)
device in Standby mode
± 2 µA
I_LO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: V_SS or V_CC
2.5 V < V_CC < 5.5 V, f_c = 400 kHz
(rise/fall time < 50 ns)
I_CC
Supply current (Read)
2.5 V < V_CC < 5.5 V, f_c = 1 MHz⁽¹⁾
(rise/fall time < 50 ns)
I_CC0 Supply current (Write) During t_W, 2.5 V < V_CC < 5.5 V
I_CC1
Standby supply
current
Device not selected⁽³⁾, V_IN = V_SS or
V_CC, V_CC = 2.5 V
Device not selected⁽³⁾, V_IN = V_SS or
V_CC, V_CC = 5.5 V
V_IL
Input low voltage
(SCL, SDA, WC)
± 2 µA
2
mA
2.5 mA
5⁽²⁾
mA
2
µA
5⁽⁴⁾⁽⁵⁾ µA
–0.45 0.3 V_CC V
Input high voltage
(SCL, SDA)
V_{IH Input high voltage}
(WC, E2, E1, E0)
0.7 V_CC 6.5
V
0.7 V_CC V_CC+0.6 V
V_OL Output low voltage
I_OL = 2.1 mA, V_CC = 2.5 V or
I_OL = 3 mA, V_CC = 5.5 V
0.4
V
1. Only for devices operating at f_C max = 1 MHz (see note⁽¹⁾ in Table 19)
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t_W (t_W is triggered by the correct decoding of a Write instruction).
4. The new M24C32-W devices (identified by the process letter K) offer I_CC1 = 3µA (max)
5. 5 µA for previous devices identified by process letter A.
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Doc ID 4578 Rev 21