M24256-DRMN6TP Datasheet, PDF (26/40 Pages) STMicroelectronics – 256-Kbit serial I²C bus EEPROM

DC and AC parameters
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Table 14. DC characteristics (M24256-BR, M24256-DR, device grade 6)
Symbol
Parameter
Test conditions⁽¹⁾ (in addition
to those in Table 7)
Min.
Max. Unit
I_LI
Input leakage current
(E1,E2, SCL, SDA)
V_IN = V_SS or V_CC, device in
Standby mode
I_LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V_SS or V_CC
-
±2
µA
-
±2
µA
I_CC Supply current (Read)
V_CC = 1.8 V, f_c= 400 kHz
f_c= 1 MHz⁽²⁾
-
0.8 mA
-
2.5 mA
I_CC0 Supply current (Write)
I_CC1 Standby supply current
V_IL
Input low voltage
(SCL, SDA, WC)
During t_W, V_CC = 1.8 V
Device not selected⁽⁴⁾,
V_IN = V_SS or V_CC, V_CC = 1.8 V
1.8 V ≤ V_CC < 2.5 V
-
2⁽³⁾
mA
-
1
µA
–0.45 0.25 V_CC V
Input high voltage
(SCL, SDA)
V_IH
Input high voltage
(WC, E2, E1, E0)
1.8 V ≤ V_CC < 2.5 V
1.8 V ≤ V_CC < 2.5 V
0.75 V_CC 6.5
V
0.75 V_CC V_CC+0.6 V
V_OL Output low voltage
I_OL = 1 mA, V_CC = 1.8 V
-
0.2
V
1. If the application uses the voltage range R device with 2.5 V < V_cc < 5.5 V and -40 °C < TA < +85 °C,
please refer to Table 13 instead of this table.
2. Only for devices identified with process letter K.
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t_W (t_W is triggered by the correct decoding of a Write instruction).
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Doc ID 6757 Rev 30