M36W108T Datasheet, PDF (20/35 Pages) STMicroelectronics – 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

M36W108T, M36W108B
Table 19. Flash Write AC Characteristics, Chip Enable Controlled
(T_A = 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V_CCF = 2.7V to 3.6V)
Flash Memory Chip
Symbol Alt
Parameter
100
C_L = 30pF
120
C_L = 100pF
Min
Max
Min
Max
t_AVAV
t_WC Address Valid to Next Address Valid
100
120
t_WLEL
t_WS Write Enable Low to Chip Enable Low
0
0
t_ELEH
t_CP Chip Enable Low to Chip Enable High
50
50
t_DVEH
t_DS Input Valid to Chip Enable High
50
50
t_EHDX
t_DH Chip Enable High to Input Transition
0
0
t_EHWH
t_WH Chip Enable High to Write Enable High
0
0
t_EHEL
t_CPH Chip Enable High to Chip Enable Low
30
20
t_AVEL
t_AS Address Valid to Chip Enable Low
0
0
t_ELAX
t_AH Chip Enable Low to Address Transition
50
50
t_GHEL
Output Enable High Chip Enable Low
0
0
t_VCHWL
t_VCS V_CC High to Write Enable Low
50
50
t_EHGL
t_OEH Chip Enable High to Output Enable Low
0
0
t_PHPHH ^(1,2) tVIDR RP Rise Time to VID
500
500
t_PLPX
t_RP RP Pulse Width
500
500
t_EHRL ^{(1) t}BUSY Program Erase Valid to RB Delay
90
90
t_PHWL ^{(1) t}RSP RP High to Write Enable Low
4
4
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
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