M29W800AT_04 Datasheet, PDF (20/40 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

M29W800AT, M29W800AB
Table 16. Read AC Characteristics
(T_A = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W800AT / M29W800AB
Symbol
Alt
Parameter
Test
Condition
100
120
V_CC = 2.7V to 3.6V V_CC = 2.7V to 3.6V
CL = 30pF
CL = 100pF
Min
Max
Min
Max
t_AVAV
t_RC
Address Valid to Next
Address Valid
E = V_IL,
G = V_IL
100
120
t_AVQV
t_ACC
Address Valid to Output
Valid
E = V_IL,
G = V_IL
100
120
t_AXQX
t_OH
Address Transition to
Output Transition
E = V_IL,
G = V_IL
0
0
t_BHQV
t_FHQV
BYTE Switching High to
Output Valid
50
60
t_BLQZ
t_FLQZ
BYTE Switching Low to
Output High Z
50
60
t_EHQX
t_OH
Chip Enable High to Output
Transition
G = V_IL
0
0
t_EHQZ ⁽¹⁾
t_HZ
Chip Enable High to Output
Hi-Z
G = V_IL
30
30
t_ELBH
t_ELBL
t_ELFH Chip Enable to BYTE
t_ELFL Switching Low or High
5
5
t_ELQV ⁽²⁾
t_CE
Chip Enable Low to Output
Valid
G = V_IL
100
120
t_ELQX ⁽¹⁾
t_LZ
Chip Enable Low to Output
Transition
G = V_IL
0
0
t_GHQX
t_OH
Output Enable High to
Output Transition
E = V_IL
0
0
t_GHQZ ⁽¹⁾
t_DF
Output Enable High to
Output Hi-Z
E = V_IL
30
30
t_GLQV ⁽²⁾
t_OE
Output Enable Low to
Output Valid
E = V_IL
40
50
t_GLQX ⁽¹⁾
t_OLZ
Output Enable Low to
Output Transition
E = V_IL
0
0
t_PHEL
t_RH
RP High to Chip Enable
Low
50
50
t_PLYH ^{(1, 3)}
t_RRB
t_READY
RP Low to Read Mode
10
10
t_PLPX
t_RP RP Pulse Width
500
500
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
20/40