M29W800AT_04 Datasheet, PDF (1/40 Pages) STMicroelectronics – 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

M29W800AT
M29W800AB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
FEATURES SUMMARY
■ 2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
■ ACCESS TIME: 80ns
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy
Output
■ SECURITY PROTECTION MEMORY AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M29W800AT: D7h
– Bottom Device Code, M29W800AB: 5Bh
Figure 1. Packages
FBGA
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
8 x 6 solder balls
SO44 (M)
Figure 2. Logic Diagram
VCC
19
A0-A18
15
DQ0-DQ14
W
DQ15A–1
M29W800AT
E
M29W800AB
BYTE
G
RB
RP
March 2004
VSS
AI02599
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