T435-400T Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH PERFORMANCE TRIACS

T410 / T435
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-a) Junction to ambient
SOT82 / SOT194
TO220AB
ISOWATT 220AB
Rth (j-c) DC Junction to case for DC
SOT82 / SOT194
TO220AB
ISOWATT 220AB
Rth (j-c) AC Junction to case for 360° conduction angle SOT82 / SOT194
( F= 50 Hz)
TO220AB
ISOWATT 220AB
Value
100
60
50
3.5
5.3
2.6
4
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VGM = 16 V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IL
IH *
VTM *
IDRM
IRRM
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs ITM = 5.5A
IG=1.2 IGT
IT= 100mA gate open
ITM= 5.5A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt *
(dI/dt)c *
Linear slope up to
VD=67%VDRM
gate open
dV/dt = 0.1V/µs
dV/dt = 20V/µs
VDRM =
400V / 600V
VDRM =
700V / 800V
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
Qu adrant
I-II-III
I-II-III
I-II-III
I-II-III
I-II-III
MAX
MAX
MIN
TYP
MAX
MAX
MAX
MAX
MAX
MIN
MIN
MIN
Suffix
T410 T435
10
35
1.5
0.2
2
30
60
15
35
1.75
0.01
2
50
250
30
250
2.7
4.4
1.8
2.7
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1.
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