T435-400T Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH PERFORMANCE TRIACS

T410
T435
HIGH PERFORMANCE TRIACS
....FEATURES
I_TRMS = 4 A
V_DRM = 400 V to 800 V
SENSITIVE GATE : I_{GT ≤ 10 mA}
HIGH COMMUTATION : (dI/dt)c > 3.5 A/ms
A1
A2 _G
TO220AB
(Plastic)
DES CRI P TI O N
The T410 / T435 high voltage TRIAC Families
are high performance planar diffused PNPN de-
vices glass passivated technology.
Packaged either in TO220AB, SOT82, SOT194
and ISOWATT220AB these products are in-
tented for all bi-directional switch applications.
ABSOLUTE RATINGS (limiting values)
A1
A2 _G
SOT82
(Plastic)
A1
A2 _G
SOT 194
(Plastic)
A1
A2 _{G ISOWAT T220AB}
(Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
TO220AB
SOT194/SOT 82
Tc = 110 °C
ISOWATT220AB Tc = 100 °C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
I2t value
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
4
35
30
4.5
10
50
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
-400
400
T410 or T435
-600
-700
600
700
Unit
-800
800
V
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