STTH806TTI Datasheet, PDF (2/5 Pages) STMicroelectronics – TURBOSWITCHO Tandem 600V ULTRA-FAST BOOST DIODE

STTH806TTI
THERMAL AND POWER DATA
Symbol
Rth (j-c)
Rth (c)
Rth (j-c)
P1
Parameter
Junction to case thermal resistance
Junction to case thermal resistance
Conduction power dissipation for
both diodes
Test conditions
Per diode
Coupling
Total
IF(AV) = 8 A δ = 0.5
Tc = 80°C
Value
5
0.2
2.6
27
Unit
°C/W
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Tests Conditions
IR * _{Reverse leakage}
current
VR = VRRM
Tj = 25°C
Tj = 125°C
VF ** _{Forward voltage drop IF = 8 A}
Tj = 25°C
Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
Min. Typ. Max. Unit
10
µA
15 100
3.6
V
2.1 2.6
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x IF(AV) + 0.1 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
IRM
Sfactor
Tests Conditions
IF = 0.5 A Irr = 0.25 A
IR = 1 A
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V
VR = 400 V IF = 8 A dIF/dt = -200 A/µs
Tj = 25°C
Tj = 125°C
Min.
Typ.
13
4
0.4
Max.
30
5.5
Unit
ns
A
-
TURN-ON SWITCHING CHARACTERISTICS
Symbol
tfr
VFP
Tests Conditions
IF = 8 A dIF/dt = 100 A/µs,
measured at 1.1 x VF max
IF = 8 A dIF/dt = 100 A/µs
Tj = 25°C
Min. Typ. Max. Unit
200 ns
Tj = 25°C
7
V
2/5