English
Language : 

STTH806TTI Datasheet, PDF (1/5 Pages) STMicroelectronics – TURBOSWITCHO Tandem 600V ULTRA-FAST BOOST DIODE
®
STTH806TTI
TURBOSWITCH™ Tandem 600V ULTRA-FAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
IRM (typ.)
8A
600 V (in series)
150 °C
2.6 V
4A
1
2
3
123
Insulated TO-220AB
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS.
DESIGNED FOR HIGH DI/DT OPERATION.
ULTRA-FAST RECOVERY CURRENT TO
COMPETE WITH GaAs DEVICES. SIZE
DIMINUTION OF MOSFET AND HEATSINKS
ALLOWED.
INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK.
INSULATED VERSION: :
Insulated voltage = 2500 V(RMS)
Capacitance = 7 pF
DESCRIPTION
The TURBOSWITCH "H" is an ultra high
performance diode composed of two 300V dice
in series. TURBOSWITCH "H" family drastically
cuts losses in the associated MOSFET when run at
high dIF/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol
VRRM
IF(RMS)
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
TM: TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 3A
Value
600
14
80
-65 +150
+ 150
Unit
V
A
A
°C
°C
1/5