STE36N50A Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE36N50A
THERMAL DATA
R_thj-case Thermal Resistance Junction-case
R_thc-h Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.3
0.05
o_{C/ W}
o_{C/ W}
AVALANCHE CHARACTERISTICS
Symb ol
IA R
E_AS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_{D D} = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
14
100
40
9
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0
I_DSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0.8 T_c = 125 ^oC
I_{G SS}
Gate-body Leakage
Current (V_{D S} = 0)
V_GS = ± 20 V
Min.
500
Typ.
Max.
Unit
V
300
µA
1500 µA
± 300 nA
ON (∗)
Symb ol
VG S(th)
RDS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 18 A
R esist anc e
VGS = 10V ID = 18 A Tc = 100 ^oC
On St ate Drain Current V_DS > I_{D( on)} x R_{D S(on) max}
VGS = 10 V
Min.
2
36
Typ.
3
0. 12
Max.
4
0. 14
0. 28
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
g_fs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D( on)} x R_{D S(on) max} I_D = 18 A
Min.
16
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
8000 pF
1300 pF
350
pF
2/8