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| STE250NS10 Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET | |||
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STE250NS10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
0.25
Max
50
°C/W
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 64 V)
Max Value
220
800
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source Breakdown
ID = 1 mA
VGS = 0
100
V
Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
50
µA
500
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±400
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 125 A
Min.
2
Typ. Max.
3
4
0.0045 0.0055
Unit
V
â¦
DYNAMIC
Symbol
gfs
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 20 V
ID = 70 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
60
31
4.3
1.2
Max.
Unit
S
nF
nF
nF
2/8
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