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| STE250NS10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET | |||
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STE250NS10
N-CHANNEL 100V - 0.0045 ⦠- 220A ISOTOP
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(on)
STE250NS10
100 V <0.0055 â¦
s TYPICAL RDS(on) = 0.0045â¦
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
220A
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM(â¢)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (AC-RMS)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
September 2001
.
Value
Unit
100
V
100
V
± 20
V
220
A
156
A
880
A
500
W
4
W/°C
3.5
V/ns
2500
V
-55 to 150
°C
150
°C
(1 )ISD â¤220A, di/dt â¤200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/8
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