STE110NA20 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STE110NA20
THERMAL DATA
R_{t hj-ca se}
R_thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
Max
0.27
0.05
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
Symb ol
I_AR
E AS
EAR
I_AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
55
500
175
32.5
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
I_DSS
I_GSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
ID = 1 mA VGS = 0
V_DS = Max Rating
VDS = Max Rating x 0.8
V_GS = ± 30 V
Tc = 125 ^oC
Min.
200
Typ . Max.
400
200
± 400
Unit
V
µA
mA
nA
ON (∗)
Symb ol
V GS(th )
R_{DS( o n )}
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 1 mA
St atic Drain-source On V_GS = 10V I_D = 55 A
Re s is ta nc e
VGS = 10V ID = 55 A Tc = 100^oC
On State Drain Current VDS > ID(on) x RDS(on)max
V_GS = 10 V
Min.
2.25
110
Typ .
3
0.015
M a x.
3.75
0. 019
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
C_oss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15 V
ID = 55 A
Min.
38
Typ .
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
12.9
nF
2870
pF
980
pF
2/8