STE110NA20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPE
ST E110NA20
STE110NA20
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
200 V
RDS(on)
< 0.019 Ω
ID
110 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.015 Ω
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar ame t er
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•) Drain Current (pulsed)
Pto t Total Dissipat ion at Tc = 25 ^oC
Derating Factor
T_{st g} St orage Temperature
T_j
Max. Operating Junction Temperature
VISO Insulat ion Withhst and Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
March 1996
Value
200
200
± 30
110
73
440
450
3 .6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
V
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