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| STDD15-07P6 Datasheet, PDF (2/3 Pages) STMicroelectronics – LOW CAPACITANCE DETECTION DIODE | |||
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STDD15-07P6
THERMAL PARAMETERS
Symbol
Parameter
Rth (j-a)* Junction to ambient
*: Mounted with minimum recommended pad size, PC board FR4.
Value
400
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
IR* Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = 1V
Tj = 25°C
VR = 15V
Tj = 125°C
VF* Forward voltage drop Tj = 25°C
IF = 1 mA
Tj = 125°C
Tj = 25°C
IF = 10 mA
Tj = 125°C
* Pulse test: tp ⤠250µs, δ ⤠2%
Min. Typ. Max. Unit
0.035 µA
6
30
0.23 µA
20 100
350 380 mV
230 260
500 570
460 510
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
CT
Diode capacitance
RF
Forward resistance
Ls Series inductance
Tests conditions
VR = 0 V
F = 1MHz
IF = 5 mA
F = 100MHz
Min.
Typ. Max. Unit
1.0 pF
15
â¦
1.5
nH
2/3
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