STDD15-07P6 Datasheet, PDF (1/3 Pages) STMicroelectronics – LOW CAPACITANCE DETECTION DIODE

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STDD15-07P6
LOW CAPACITANCE DETECTION DIODE
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
10 mA
15 V
150 °C
V_F (max)
0.51 V
FEATURES AND BENEFITS
s Low diode capacitance
s Device designed for RF application
s Low profile package
s 40% space saving versus SOT-323
s Very low parasitic inductor & resistor
DESCRIPTION
The STDD15-07P6 is a dual diode series for the
detection of a RF signal and the compensation of
the voltage drift with the temperature. The
SOT-666 package makes the device ideal in
application where the space saving is critical like
mobile phones.
The low junction capacitance will reduce the
disturbance on the RF signal.
SOT-666
SCHEMATIC DIAGRAM
1
6
2
5
3
4
Parallel configuration
STDD15-07P6
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
15
V
I_F
Continuous forward current
10
mA
I_FSM Surge non repetitive forward current Half wave, single phase, 60Hz
2
A
T_stg Storage temperature range
- 65 + 150 °C
Tj Maximum operating junction temperature
150
°C
November 2003 - Ed: 1A
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