STD93003 Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

STD93003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = -500V
VCE = -500V
Tj = 125^oC
V(BR)EBO Emitter Base
Breakdown Voltage
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IE = -10 mA
IC = -10 mA
L = 25 mH
IC = -0.5 A
IC = -0.35 A
IB = -0.1 A
IB = -50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.1 A
hFE∗ DC Current Gain
IC = -10 mA
IC = -0.35 A
IC = -1 A
VCE = -5 V
VCE = -5 V
VCE = -5 V
RESISTIVE LOAD
tr
Rise Time
ts
Storage Time
tf
Fall Time
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = -0.35 A
IB1 = -70 mA
Tp ≥ 25 µs
IC = -0.5 A
VBE(off) = 5 V
Vclamp = 300 V
VCC = 125 V
IB2 = 70 mA
(see Figure 2)
IB1 = -0.1 A
L = 10 mH
(see Figure 1)
Esb Avalanche Energy
L = 4 mH
IBR ≤ 2.5 A
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
C = 1.8 nF
25^oC < TC < 125^oC
Min. Typ.
-5
-400
10
16
25
4
90
1.5 2.2
0.1
400
40
12
Max.
-1
-5
-10
-0.5
-0.5
-1
32
2.9
Unit
mA
mA
V
V
V
V
V
ns
µs
µs
ns
ns
mJ
2/8