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STD93003 Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
®
STD93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD83003, its
complementary NPN transistor.
1
2
3
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage
(IC = 0, IB = -0.75 A, tp < 10µs, Tj < 150oC)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
-500
-400
V(BR)EBO
-1.5
-3
-0.75
-1.5
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
October 2002
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