STD83003 Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STD83003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV Collector Cut-off
VCE = 700V
Current (VBE = -1.5V) VCE = 700V
Tj = 125^oC
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IE = 10 mA
IC = 10 mA
L = 25 mH
IC = 0.5 A
IC = 0.35 A
IB = 0.1 A
IB = 50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
hFE∗ DC Current Gain
IC = 10 mA
IC = 0.35 A
IC = 1 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
RESISTIVE LOAD
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC = 0.35 A
IB1 = 70 mA
Tp ≥ 25 µs
INDUCTIVE LOAD
ts
Storage Time
IC = 0.5 A
VBE(off) = -5 V
tf
Fall Time
Vclamp = 300 V
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
VCC = 125 V
IB2 = -70 mA
(see figure 2)
IB1 = 0.1 A
L = 10 mH
(see figure 1)
Min. Typ.
12
400
10
16
25
4
100
1.5 2.2
0.2
450
90
Max.
1
5
18
0.5
1
1
32
2.9
Unit
mA
mA
V
V
V
V
V
ns
µs
µs
ns
ns
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