STD83003 Datasheet, PDF (1/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
STD83003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) / DPAK (TO-252) PACKAGES
s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STD83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STD93003, its
complementary PNP transistor.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage
(IC = 0, IB = 0.75 A, tp < 10µs, Tj < 150^oC)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
1
2
3
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
Value
700
400
V(BR)EBO
1.5
3
0.75
1.5
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
October 2002
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