STD6NF10 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET

STD6NF10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
T_j
Maximum Lead Temperature For Soldering Purpose Typ
5
°C/W
100
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V_(BR)DSS
I_DSS
I_GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V_GS = 0)
Gate-body Leakage
Current (V_DS = 0)
Test Conditions
I_D = 250 µA, V_GS = 0
Min.
100
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
V_GS = ± 20V
Typ.
Max.
1
10
±1
Unit
V
µA
µA
µA
ON ⁽¹⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 3 A
Min.
2
Typ.
0.22
Max.
4
0.25
Unit
V
Ω
DYNAMIC
Symbol
Parameter
g_fs ^(*)
Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max,
I_D = 3 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
34
280
45
20
Max.
Unit
S
pF
pF
pF
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