STD6NF10 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET

STD6NF10
N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD6NF10
100 V <0.250 Ω
6A
s TYPICAL R_DS(on) = 0.22 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
dv/dt ⁽¹⁾
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T_C = 25°C
Drain Current (continuos) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
Peak Diode Recovery voltage slope
E_AS ⁽²⁾
T_stg
T_j
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(^{•) Pulse width limited by safe operating area.}
June 2001
.
Value
100
100
± 20
6
4
24
30
0.2
40
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-65 to 175
°C
(1) ISD ≤6A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 ^oC, ID = 3A, VDD= 50V
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