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| STD6NC40 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh™II MOSFET | |||
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STD6NC40
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.27
Rthj-amb Thermal Resistance Junction-ambient Max
100
Rthc-sink Thermal Resistance Case-sink Typ
1.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6
320
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
400
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.75
Max.
4
1
Unit
V
â¦
6
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =3A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
5.1
530
90
15
Max.
Unit
S
pF
pF
pF
2/9
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