STD6NC40 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh™II MOSFET

STD6NC40
N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD6NC40
400V
<1Ω
5A
s TYPICAL R_DS(on) = 0.75Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX “-1” FOR ORDERING IN IPAK
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
1
DPAK
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (s) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
March 2001
Value
Unit
400
V
400
V
±30
V
5
A
3
A
20
A
55
W
0.44
W/°C
3
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤5A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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