STD60NF55L Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET™ II POWER MOSFET

STD60NF55L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
1.36
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
55
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 15 V
±100
nA
ON (1)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS, I_D = 250µA
V_GS = 10 V, I_D = 30 A
V_GS = 5 V, I_D = 30 A
Min.
1
Typ.
0.012
0.014
Max.
2
0.015
0.017
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs (1)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 10 V, I_D = 30 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
35
1950
390
130
Max.
Unit
S
pF
pF
pF
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