STD60NF55L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET™ II POWER MOSFET

STD60NF55L
N-CHANNEL 55V - 0.012Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD60NF55L
55V < 0.015Ω 60A
s TYPICAL R_DS(on) = 0.012Ω
s LOW THRESHOLD DRIVE
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility..
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s AUTOMOTIVE
s MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2002
Value
55
55
± 15
60
42
240
110
0.73
16
400
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
– 55 to 175
°C
(1)I_SD ≤40A, di/dt ≤350A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting T_j=25°C, I_D=30A, V_DD=20V
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