STD4NC50_07 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerMesh™II MOSFET

STD4NC50/-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.5
Rthj-amb Thermal Resistance Junction-ambient Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
3.7
220
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
500
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
50
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ±30V
±100
nA
ON ⁽¹⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 1.9 A
Min.
2
Typ.
3
1.3
Max.
4
1.5
Unit
V
Ω
DYNAMIC
Symbol
g_fs ⁽¹⁾
Parameter
Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max,
I_D = 1.9A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
3
700
85
9
Max.
Unit
S
pF
pF
pF
2/9