STD4NC50_07 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerMesh™II MOSFET

STD4NC50
STD4NC50-1
N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD4NC50
STD4NC50-1
500V
500V
<1.5Ω
<1.5Ω
3.7A
3.7A
s TYPICAL R_DS(on) = 1.3Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
1
DPAK
(NO SUFFIX)
3
2
1
IPAK
(SUFFIX“-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (*) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2001
Value
500
500
±30
3.7
2.3
14.8
50
0.4
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)I_SD ≤3.7A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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