STD3PS25 Datasheet, PDF (2/10 Pages) STMicroelectronics – P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET

STD3PS25 - STD3PS25-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.77
Rthj-amb Thermal Resistance Junction-ambient Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
250
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
±10
µA
ON
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 0.3 A
Min.
2
Typ.
3
2.1
Max. Unit
4
V
2.8
Ω
DYNAMIC
Symbol
C_iss
C_oss
C_rss
R_G
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate-Input Resistance
Test Conditions
V_DS = 25 V, f = 1 MHz, V_GS = 0
Min.
f = 1 MHz,Gate DC Bias=0
Test Signal Level=20 mV
Open Drain
Typ.
260
52
25
6
Max. Unit
pF
pF
pF
Ω
2/10