STD3PS25 Datasheet, PDF (1/10 Pages) STMicroelectronics – P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET

STD3PS25 - STD3PS25-1
P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD3PS25
STD3PS25-1
250 V < 2.8 Ω
3A
250 V < 2.8 Ω
3A
s TYPICAL R_DS(on) = 2.1Ω
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s GATE-SOURCE ZENER DIODE
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s CONSUMER
s LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (1) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
Value
250
250
±25
3
1.9
12
45
0.36
– 50 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
June 2003
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