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STD17NF03L Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET™ POWER MOSFET
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STD17NF03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
7.5
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 8.5 A
VGS = 5 V, ID = 8.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
17
Typ.
0.038
0.045
Max.
0.05
0.06
Unit
V
Ω
A
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =11A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
7
330
90
40
Max.
Unit
S
pF
pF
pF
2/9
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